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PECVD
Applications

PECVD

Machine Features

1. Mature high‑throughput process, dual‑mode temperature control technology and thin-film passivation technology for silicon wafers; fast‑adaptive closed‑loop pressure control technology, plasma discharge‑field detection technology, and anti‑collision technology for wafer‑loading‑and‑unloading boat

2. Graphite‑boat electrode technology: surface‑contact of front‑side electrodes, regularly replaceable and cleanable electrode blocks, tail electrodes adjustable outside the furnace tube, enlarged electrode size and optimized electrode material, which efficiently resolve high frequent alarms

3. Fast‑cooling furnace body: the latest patented technology rapidly lowers furnace‑body temperature to the target value, raises the cooling rate by over 25% and greatly improves temperature uniformity inside the furnace tube

4. Patented parallel heat dissipation for boat‑storage stations: improves cooling efficiency and cuts cooling time by more than 15%; front-side air intake improves internal cleanliness of the operating console.

5. Integrated industrial PC and modular process‑control software

6. Comprehensive power‑failure safety protection and flange cooling‑water fault protection.


Applications

A layer of anti‑reflection silicon‑nitride (SiₓNᵧ) film with a thickness of 75‑140 nm is deposited on the silicon‑wafer surface. Meanwhile, H atoms and H radicals generated during deposition provide surface and bulk passivation for the silicon wafer. The coating reduces optical reflection and extends the minority‑carrier lifetime of wafers, thereby improving the conversion efficiency of crystalline‑silicon solar cells. This process is mainly utilized for front and rear side silicon‑nitride film deposition of PERC and TOPCon cells.  


TOPCon Cell Process
Technical Data Sheet

Machine Model

PECVD

Deposition Film Types

AlO,SiO,SiON,SiN,SiC

Batch Loading Capacity

768pcs/batch(182mm),616pcs/batch (210mm),500pcs/batch (230mm)

Alumina Film Thickness Uniformity

Intra-wafer≤6%   Inter-wafer≤6%    Inter-batch≤5% (182mm wafers)

Alumina Refractive Index

1.65(±0.05)

UP-TIME

≥98%

Operating Temperature Range

100~600℃

Temperature Control

9-point temperature control, dual-mode internal/external control

Heating Mode

Automatic ramp heating with rapid constant temperature function

Cooling Mode

Latest patented technology, 9-zone segmented active cooling   furnace body

Constant Temperature Zone Accuracy & Length

±2°C/3200mm(500°C)

Single-point Temperature Stability

<±1°C/4h(500°C)

Heating Time

RT→450℃≤45min

Temperature Control

Dual-mode precision control

System Ultimate Vacuum

<3Pa

System Leak Rate

Pressure   rise rate<1Pa/min after pump stop and valve closure

Pressure Control Method

Fast-adjusting fully automatic closed-loop

Process Control Method

Fully automatic process control with multiple safety interlock   alarms

HMI

LCD display, touch operation, recipe editing, online monitoring,   permission management, shift management, networking function

MES/CCRM

Available


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