

1. Mature high-throughput process, dual-mode temperature control technology, thin-film silicon protection technology
2. Diverse coating technologies available: multi-layer composite film, doped polysilicon technology
3. Patented rapid cooling furnace body: The latest patented technology enables fast temperature reduction to set value, with cooling rate increased by over 25% and greatly improved temperature uniformity inside furnace tubes
4. Fast adaptive closed-loop pressure control technology
5. Fully structured and high-performance MES/CCRM system
6. All-in-one industrial controller + modular process control software
7. Comprehensive power failure safety protection and flange water abnormality protection
Suitable for semiconductor and photovoltaic industries. For TOPCon cell production in PV field, the LPCVD equipment realizes one-stop fabrication of tunnel oxide layer and polysilicon layer. Combining thermal oxidation and polysilicon deposition greatly boosts throughput, and it is compatible with intrinsic/doped polysilicon growth processes.
Film Types | SiOx, i/d-Poly-Si |
Wafer Loading Size | Vertical loading: 2880 pcs/batch (182mm),2200 pcs/batch (210mm) |
Film Thickness Uniformity | SiOx Uniformity: Adjustable thickness 1–3 nm, accuracy 0.1 nm. SiOx thickness tested with polished wafers. Poly Uniformity: Adjustable thickness 50–200 nm, accuracy 1 nm. Poly thickness tested with polished wafers. Within-wafer: ≤4%; Wafer-to-wafer: ≤4%; Batch-to-batch: ≤3% (for thickness >100 nm)) |
Up-Time | ≥95% |
Operating Temperature | 400-750℃ |
Temperature Control | 6-point temperature control, internal & external dual-mode control |
Heating Mode | Automatic ramp heating & rapid temperature stabilization |
Cooling Mode | Patented technology, active cooling furnace with 6-zone segmented control |
Accuracy & Length In Constant Temperature Zone | ±1℃/2800mm(550-700℃) |
Single-Point Temperature Stability | 1±℃/6H |
Heating Time | RT→750℃≤45min |
Cooling Rate | ≥5℃/min |
Temperature Control | Dual-mode Precision Control |
Ultimate System Vacuum | <3Pa |
System Leak Rate | Pressure Rise Rate (Pump Stop & Valve Closed)<2Pa/min |
Pressure Control Mode | Fast adjustment, fully automatic closed-loop control |
Process Control Mode | Fully automatic process control, multi-interlock safety alarm |
HMI | LCD display, touch operation, process editing, on-line monitoring, authority management, team management, networking function |
Mes/Ccrm | Supported |