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SiC Laser-Annealing Equipment

Machine Features

1. Modular design with self‑developed advanced integrated laser technology

2. Highly uniform and stable spot‑energy distribution; compatible with 4‑inch, 6‑inch and 8‑inch thin‑sheet wafers

3. The annealed surface stays uniform and flat, with excellent electrical properties and surface‑morphology

4. Strict control of chamber oxygen content to effectively manage the quantity and distribution of carbon precipitation on the wafer‑surface

5. Equipped with a monitoring‑compensation system for optical‑energy stability and temperature detection on the non‑annealing side

6. Built‑in EFEM wafer‑transfer system. The equipment conforms to SEMI standards and supports SECS‑GEM communication

Applications

Anneal the transition metal deposited on the heavily‑doped silicon‑carbide (SiC) surface to form favourable ohmic‑contact.

Semiconductor Industry

Technical Data Sheet

Machine Model	SiC Laser-Annealing Equipment
Supported Wafer Sizes	4inch、6inch、8inch
Thin‑Wafer Annealing	Supported
Beam Shaping	Top‑hat Beam
Beam Uniformity	>95%
Energy Stability	≤1%
Specific‑Contact‑Resistivity	≤5×10^(-5)Ω.cm²
Surface Temperature	Annealed‑side >1500℃ Non‑annealed‑side ＜100 ℃
Chamber Oxygen Content	N2/Ar：99.99%，<100ppm @25s
Motion‑Stage Accuracy	Straightness：±1μm Repositioning Accuracy：±1μm
Wafer‑Transfer Mode	Automatic Transferring (compatible with wafers or wafer carriers)

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Sales Hotline

+86-400-666-4000