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LT/LN Wafer Laser Stealth Dicing System

LT/LN Wafer Laser Stealth Dicing System

Machine Features

1. Light‑source system developed for the characteristics of LT/LN materials enables high‑precision internal‑modification dicing.

2. High‑speed dicing, superior chipping control, compatible with front‑side and rear‑side dicing processes.

3. Consumable‑free operation and zero‑material‑loss processing.

4. Fully‑automatic operation, compatible with 4‑inch and 6‑inch wafers.

5. Provide systematic solutions, with supporting wafer‑splitting and wafer‑expanding devices.

6. Comply with SEMI standards and support the SECS‑GEM communication protocol.


Applications

It is adopted for internal‑modification dicing of LT/LN substrate wafers for audio‑video filters, satellite filters, mobile‑communication filters, wireless remote‑control resonators and other components. End‑devices are applied in high‑end‑communication sectors covering mobile phones, two‑way radios, satellite communications and aerospace.


OLED & LCD Panel Industry
Semiconductor Industry
Technical Data Sheet

Machine Model

LT/LN Wafer Laser Stealth Dicing   System

Wafer Substrate

LT/LN‑based Substrate

Wafer Size

4‑inch, 6‑inch

Wafer Thickness

50μm-500μm

Dicing Speed

600mm/s-800mm/s

Positioning Accuracy

Repositioning Accuracy:±1μ Positioning Accuracy:±1μm

Transport System

Load port, robot, aligner

Dimensions (LxWxH)

2070mm×1420mm×2238mm


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