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LED Stepper Lithography Machine

LED Stepper Lithography Machine

Machine Features

1. Applied to the lithography process in the production of 4‑6‑inch substrate‑based LED silicon chips and sapphire chips.

2. Adopting an ultra‑large exposure field, the equipment cuts down number of exposures and improves production efficiency.

3. High resolution and excellent line‑width uniformity.


Applications

LED Wafer

LED Industry
Technical Data Sheet

Machine   Model

LED   Stepper Lithography Machine

Wafer   Size

4 inch   and 6 inch Wafers

Processing   Speed

4 inch,   137pcs/h
  6 inch, 110pcs/h

Processing   Accuracy

Resolution:   2μm L/S

Positioning   Accuracy


  X: ±200nm
  Y: ±200nm
  Z: ±350nm
  Rx Ry Rz:10urad

Laser‑source   Parameters

Laser   Source:2000W UV Lamp,Wavelength   365nm
  Exposure Area:53*38.5mm
  Operating Luminance:>550mW/cm2(New lamp)
  Laser‑Source Uniformity:≤3%

Tact   time

4 inch:43.1 s (first wafer), cycle‑time TT: 25.6 s
  6 inch:49.1 s (first wafer), cycle‑time TT: 31.6 s

Equipment   Utilization

>95%


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