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Laser-Ablation Cutting for SiC Wafers

DA100-A7 PRO

Machine Features

1. High‑precision machining for workpieces thinner than 200 μm; fully compatible with wafers under 8‑inch

2. Separation process with one‑step reduction and no‑film‑transfer requirement,

3. Lower CCD with resolution < 1 μm, achieving industry‑leading accuracy

4. Self‑developed multi‑optical‑path system with switchable optical paths for high‑efficiency machining

5. Unattended operation with fully‑automatic loading and unloading

6. Equipped with automatic adhesive coating and cleaning functions

Applications

Laser‑surface‑ablation cutting for third‑generation‑semiconductor SiC wafers. It applies to radio‑frequency devices, power‑related components including power diodes, power transistors, thyristors, MOSFETs and IGBTs, as‑well‑as new‑energy vehicles, photovoltaic power generation, smart power grids, rail transit and radio‑frequency communications industries.

Semiconductor Industry

Sales Hotline

+86-400-666-4000