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Etching Machine ET12-XS2E2S1A
ET12-XS2E2S1A

Etching Machine

ET12-XS2E2S1A

Machine Features

1. Positionandspeedcontrollable swingarm sprays chemical solutions for improved etching uniformity

2. Layerstructured reaction chamber allows spraying of multiple chemical solutions inside the single chamber with efficient recovery of chemical solutions

3. Stacktype layout for compact footprint; supporting up to four etching units


Applications

Etching process for compound semiconductors, power‑devices, MEMS components, advanced packaging and RF integrated‑circuits


Semiconductor Industry
Technical Data Sheet

Machine   Model

Etching   Machine ET12-XS2E2S1A

Wafer   Cassette Quantity

2cs&2lp

Configuration

4 Etch   Units

Wafer Type

Round Wafers

Wafer Size(mm)

50-300

Throughput(WPH)

90

Chemical   Solution

H2O2、Strong Acids and Alkalis

Substrate   Material

Si、Glass、Sapphire、GaN、GaAs、SiC、LiTaO3、Li3PO4

Applicable   Processes

Wet   Etch

Drying   Mode

Spin   Dry+N2 Dry


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